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BTN7971B high current pn half bridge novalithic? data sheet, rev. 2.0, june 2008 automotive power
data sheet 2 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.1 pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 block description and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1 supply characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.2 power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.2.1 power stages - static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2.2 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.2.3 power stages - dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.3 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.1 overvoltage lock out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.2 undervoltage shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.3 overtemperature protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.4 current limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.5 short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.3.6 electrical characteristics - protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5.4 control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.1 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.2 dead time generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.3 adjustable slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.4 status flag diagnosis with current sense capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.5 truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5.4.6 electrical characteristics - control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.1 application example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.2 layout considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.3 half-bridge configuration considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 table of contents
pg-to263-7-1 type package marking BTN7971B pg-to263-7-1 BTN7971B data sheet 3 rev. 2.0, 2008-06-27 high current pn half bridge novalithic? BTN7971B 1overview features ? path resistance of max. 30.5 m @ 150 c (typ. 16 m @ 25 c) high side: max. 12.8 m @ 150 c (typ. 7 m @ 25 c) low side: max. 17.7 m @ 150 c (typ. 9 m @ 25 c) ? low quiescent current of typ. 7 a @ 25 c ? pwm capability of up to 25 khz co mbined with active freewheeling ? enhanced switching speed for reduced switching losses ? switched mode current limitation for reduced power dissipation in overcurrent ? current limitation level of 50 a min. / 70 a typ. (low side) ? status flag diagnosis with current sense capability ? overtemperature shut down with latch behavior ? overvoltage lock out ? undervoltage shut down ? driver circuit with logic level inputs ? adjustable slew rates for optimized emi ? green product (rohs compliant) ? aec qualified description the BTN7971B is a integrated high current half bridge fo r motor drive applications. it is part of the novalithic? family containing one p-channel highside mosfet and one n-channel lowside mosfet with an integrated driver ic in one package. due to the p-channel highside switch th e need for a charge pump is eliminated thus minimizing emi. interfacing to a microcontroller is made easy by th e integrated driver ic which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, ov ercurrent and short circuit. the BTN7971B provides a cost optimized solution for protected high current pwm motor drives with very low board space consumption.
data sheet 4 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block diagram 2 block diagram the BTN7971B is part of the novalithi c? family containing three separate chips in one package: one p-channel highside mosfet and one n-channel lowside mosfet together with a driver ic, forming a integrated high current half-bridge. all three chips are mounted on one common lead frame, using the chip on chip and chip by chip technology. the power switches utilize vertical mos technologies to ensure optimum on state resistance. due to the p-channel highside switch the need for a charge pum p is eliminated thus minimizing emi. interfacing to a microcontroller is made easy by the integrated driver ic which features logic level inputs, diagnosis with current sense, slew rate adjustme nt, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. the BTN7971B can be combined with other BTN7971B to form h- bridge and 3-phase drive configurations. 2.1 block diagram figure 1 block diagram 2.2 terms following figure shows the terms used in this data sheet. figure 2 terms is sr inh in gnd out vs gate driver hs slewrate adjustment digital logic overvolt. detection overtemp. detection overcurr. detection ls overcurr. detection hs current sense undervolt. detection gate driver ls ls off hs off i in v in out i inh v inh v sr i sr v is i is v s i out , i l v out v ds (hs ) gnd i gnd, i d( ls) i vs , -i d( hs) in inh sr is vs v sd(ls )
data sheet 5 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B pin configuration 3 pin configuration 3.1 pin assignment figure 3 pin assignment BTN7971B (top view) 3.2 pin definitions and functions bold type: pin needs power wiring pin symbol i/o function 1gnd -ground 2 in i input defines whether high- or lowside switch is activated 3 inh i inhibit when set to low device goes in sleep mode 4,8 out o power output of the bridge 5sr islew rate the slew rate of the power switch es can be adjusted by connecting a resistor between sr and gnd 6 is o current sense and diagnostics 7 vs - supply 1 2 35 6 7 4 8
data sheet 6 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B general product characteristics 4 general product characteristics 4.1 absolute maximum ratings absolute maximum ratings 1) t j = -40 c to +150 c; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 1) not subject to production test, specified by design pos. parameter symbol limit values unit conditions min. max. voltages 4.1.1 supply voltage v s -0.3 45 v ? 4.1.2 logic input voltage v in v inh -0.3 5.3 v ? 4.1.3 voltage at sr pin v sr -0.3 1.0 v ? 4.1.4 voltage between vs and is pin v s - v is -0.3 45 v ? 4.1.5 voltage at is pin v is -20 45 v ? currents 4.1.6 hs/ls conti nuous drain current 2) 2) maximum reachable current may be smaller depending on current limitation level i d(hs) i d(ls) -44 44 a t c < 85c switch active -40 40 a t c < 125c switch active 4.1.7 hs/ls pulsed drain current 2) i d(hs) i d(ls) -90 90 a t c < 85c t pulse = 10ms single pulse -85 85 a t c < 125c t pulse = 10ms single pulse 4.1.8 hs/ls pwm current 2) i d(hs) i d(ls) -55 55 a t c < 85c f = 1khz, dc = 50% -50 50 a t c < 125c f = 1khz, dc = 50% -60 60 a t c < 85c f = 20khz, dc = 50% -54 54 a t c < 125c f = 20khz, dc = 50% temperatures 4.1.9 junction temperature t j -40 150 c? 4.1.10 storage temperature t stg -55 150 c? esd susceptibility 4.1.11 esd susceptibility hbm in, inh, sr, is out, gnd, vs v esd -2 -6 2 6 kv hbm 3) 3) esd susceptibility, hbm accordin g to eia/jesd22-a114-b (1.5 k , 100 pf)
data sheet 7 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B general product characteristics note: stresses above the ones listed here may cause perm anent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. maximum single pulse current figure 4 BTN7971B maximum single pulse current ( t c < 85 c) this diagram shows the maximum single pulse curr ent that can be driven for a given pulse time t pulse . the maximum reachable current may be smaller depending on the current limitation level. pulse time may be limited due to thermal protection of the device. 0 10 20 30 40 50 60 70 80 90 100 1,0e-03 1,0e-02 1,0e-01 1,0e+00 1,0e+01 t pulse [s] |i max | [a]
data sheet 8 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B general product characteristics 4.2 functional range 4.3 thermal resistance pos. parameter symbol limit values unit conditions min. max. 4.2.1 supply voltage range for nominal operation v s(nom) 818v? 4.2.2 extended supply voltage range for operation v s(ext) v uv(off) max 28 v parameter deviations possible 4.2.3 junction temperature t j -40 150 c? pos. parameter symbol limit values unit conditions min. typ. max. 4.3.1 thermal resistance junction-case, low side switch 1) r thjc(ls) = t j(ls) / p v(ls) 1) not subject to production test, specified by design r thjc(ls) ? 1.3 1.8 k/w ? 4.3.2 thermal resistance junction-case, high side switch 1) r thjc(hs) = t j(hs) / p v(hs) r thjc(hs) ? 0.6 0.9 k/w ? 4.3.3 thermal resistance junction-case, both switches 1) r thjc = max[ t j(hs) , t j(ls) ] / ( p v(hs) + p v(ls) ) r thjc ? 0.7 1.0 k/w ? 4.3.4 thermal resistance junction-ambient 1) r thja ?20?k/w 2) 2) specified r thja value is according to jedec jesd51-2,-5,-7 at natural convection on fr4 2s2p board; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm boar d with 2 inner copper layers (2 x 70 m cu, 2 x 35 m cu).
data sheet 9 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics 5 block description and characteristics 5.1 supply characteristics figure 5 typical quiescent current vs. junction temperature v s = 8 v to 18 v, t j = -40 c to +150 c, i l = 0 a, all voltages with respect to gr ound, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. general 5.1.1 supply current i vs(on) ?23ma v inh = 5 v v in = 0v or 5v r sr = 0 dc-mode normal operation (no fault condition) 5.1.2 quiescent current i vs(off) ?712a v inh = 0 v v in = 0v or 5v t j < 85 c ??65a v inh = 0 v v in = 0v or 5v 0 5 10 15 20 25 -40 0 40 80 120 160 t i vs(of f) [a] [c]
data sheet 10 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics 5.2 power stages the power stages of the BTN7971B cons ist of a p-channel vertical dmos tran sistor for the high side switch and a n-channel vertical dmos transistor fo r the low side switch. all protection and diagnostic functions are located in a separate top chip. both switches can be operated up to 25 khz, allowing active freewheeling and thus minimizing power dissipation in the forward o peration of the integrated diodes. the on state resistance r on is dependent on the supply voltage v s as well as on the junction temperature t j . the typical on state resistance characteristics are shown in figure 6 . figure 6 typical on state resistance vs. supply voltage (BTN7971B) 5 10 15 20 25 4 8 12 16 20 24 28 high side switch t j = 150c t j = 25c t j = -40c v s [v] r on(hs) [m ] 5 10 15 20 25 4 8 12 16 2 0 2 4 2 8 low side switch t j = 150c t j = 25c t j = - 40c r on(ls ) [m ] v s [v]
data sheet 11 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics 5.2.1 power stages - static characteristics v s = 8 v to 18 v, t j = -40 c to +150 c, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. high side switch - static characteristics 5.2.1 on state high side resistance r on(hs) ? ? 7 10 12.8 m i out = 20 a; v s = 13.5 v t j = 25 c t j = 150 c 5.2.2 leakage current high side i l(lkhs) ??1a v inh = 0 v; v out = 0 v t j < 85 c ?? 50a v inh = 0 v; v out = 0 v t j = 150 c 5.2.3 reverse diode forward-voltage high side 1) 1) due to active freewheeling, diode is conducting only for a few s, depending on r sr v ds(hs) ? ? ? 0.9 0.8 0.6 1.5 1.1 0.8 v i out =-9a t j = -40 c t j = 25 c t j = 150 c low side switch - static characteristics 5.2.4 on state low side resistance r on(ls) ? ? 9 14 ? 17.7 m i out =-20a; v s = 13.5 v t j = 25 c t j = 150 c 5.2.5 leakage current low side i l(lkls) ??1a v inh = 0 v; v out = v s t j < 85 c ?? 10a v inh = 0 v; v out = v s t j = 150 c 5.2.6 reverse diode forward-voltage low side 1) v sd(ls) ? ? ? 0.9 0.8 0.7 1.5 1.1 0.9 v i out = 9 a t j = -40 c t j = 25 c t j = 150 c
data sheet 12 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics 5.2.2 switching times figure 7 definition of swit ching times high side (r load to gnd) figure 8 definition of switching times low side (r load to vs) due to the timing difference s for the rising and the falli ng edge there will be a slight difference betw een the length of the input pulse and the length of the output puls e. it can be calculated using the following formulas: ? t hs = ( t dr(hs) + 0.5 t r(hs) ) - ( t df(hs) + 0.5 t f(hs) ) ? t ls = ( t df(ls) + 0.5 t f(ls) ) - ( t dr(ls) + 0.5 t r(ls) ). in v out t t 90% 10% v out 90% 10% t dr(hs) t r(hs) t df(hs) t f(hs) v out in v out t t 90% 10% 90% 10% v out t df(ls) t f(ls) v out t dr(ls) t r(ls)
data sheet 13 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics 5.2.3 power stages - dynamic characteristics v s = 13.5 v, t j = -40 c to +150 c, r load = 2 , all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. high side switch dynamic characteristics 5.2.7 rise-time of hs t r(hs) 0.2 ? 0.8 0.6 1 2.7 1 ? 6 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.8 slew rate hs on 1) 1) not subject to production test, calculated value; | v out |/ t r(hs) or |- v out |/ t f(hs) v out / t r( hs) 10.8 ? 1.8 18 10.8 4 54 ? 13.5 v/s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.9 switch on delay time hs t dr(hs) 1.2 ? 2 2 2.8 7.8 2.8 ? 15 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.10 fall-time of hs t f(hs) 0.25 ? 0.8 0.65 1 3.6 1.1 ? 7 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.11 slew rate hs off 1) - v out / t f(hs) 9.8 ? 1.5 16.6 10.8 3 43.2 ? 13.5 v/s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.12 switch off delay time hs t df(hs) 1 ? 1 1.6 2.3 6 2.2 ? 11 s r sr = 0 r sr = 5.1 k r sr = 51 k
data sheet 14 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics v s = 13.5 v, t j = -40 c to +150 c, r load = 2 , all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. low side switch dynamic characteristics 5.2.13 rise-time of ls t r(ls) 0.2 ? 0.8 0.55 1 2.6 0.9 ? 6 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.14 slew rate ls switch off 1) 1) not subject to production test, calculated value; | v out |/ t r(ls) or |- v out |/ t f(ls) v out / t r(ls) 12 ? 1.8 19.6 10.8 4.2 54 ? 13.5 v/s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.15 switch off delay time ls t dr(ls) 0.3 ? 0.8 0.8 1.2 3.6 1.3 ? 7 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.16 fall-time of ls t f(ls) 0.15 ? 0.8 0.5 1 2.8 0.85 ? 6 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.17 slew rate ls switch on 1) - v out / t f(ls) 12.7 ? 1.8 21.6 10.8 3.9 72 ? 13.5 v/s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.18 switch on delay time ls t df(ls) 1.8 ? 3 2.7 3.8 10 3.6 ? 18 s r sr = 0 r sr = 5.1 k r sr = 51 k
data sheet 15 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics 5.3 protection functions the device provides integrated protection functions. these are designed to prevent ic destruction under fault conditions described in the data s heet. fault conditions are considered as ?outside? normal operating range. protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation ( chapter 5.3.4 ). in a fault condition the bt n7971b will apply the highest sl ew rate possib le independent of the connected slew rate resistor. overvoltage, overtemperature and overcu rrent are indicated by a fault current i is(lim) at the is pin as described in the paragraph ?status flag diagnosis with current sense capability? on page 19 and figure 12 . in the following the protection functions are listed in order of their priority. overvoltage lock out overrides all other error modes. 5.3.1 overvoltage lock out to assure a high immunity against ov ervoltages (e.g. load dump conditions) the device shuts the lowside mosfet off and turns the highside mosfet on, if the supply voltage is exceeding the over voltage protection level v ov(off) . the ic operates in normal mode again with a hysteresis v ov(hy) if the supply voltage decreases below the switch- on voltage v ov(on) . in h-bridge configuratio n, this behavior of the BTN7971B will lead to freewh eeling in highside during over voltage. 5.3.2 undervoltage shut down to avoid uncontrolled motion of the driven motor at low vo ltages the device shuts off (o utput is tri-state), if the supply voltage drops belo w the switch-o ff voltage v uv(off) . the ic becomes active again with a hysteresis v uv(hy) if the supply voltage rises above the switch-on voltage v uv(on) . note: note: with decreasing v s < v uv(off)max , activation of the current limitation mode may occur before undervoltage shut down with ambient temperatures less than 25c . see table ?switch-off voltage? on page 18 . 5.3.3 overtemperature protection the BTN7971B is protected against overtemperature by an integrated temperature sensor. overtemperature leads to a shut down of both output stages. this state is latched until the device is reset by a low signal with a minimum length of t reset at the inh pin, provided that its temperatur e has decreased at least the thermal hysteresis t in the meantime. repetitive use of the overtemper ature protection impacts lifetime. 5.3.4 current limitation the current in the bridge is measured in both switches. as soon as the current in forward direction in one switch (high side or low side) is reaching the limit i clx , this switch is deactivated and the other switch is activated for t cls . during that time all changes at the in pin are ignored. however, the inh pin can still be used to switch both mosfets off. after t cls the switches return to their initial setting. the error signal at the is pin is reset after 2 * t cls . unintentional triggering of the current limitation by shor t current spikes (e.g. inflic ted by emi coming from the motor) is suppressed by internal filter circuitry. due to thresholds and reaction delay times of the filter circuitry the effective current limitation level i clx depends on the slew rate of the load current di/dt as shown in figure 10 .
data sheet 16 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics figure 9 timing diagram current limitation (inductive load) figure 10 typical current limitation level vs. current slew rate di/dt i l t i clx t cls i clx0 di l /dt i clh [a] [a/ms] 50 55 60 65 70 75 80 85 90 0 500 1000 1500 2000 i clh0 t j = 25c t j = 150c t j = -40c high side switch di l /dt i cll [a] [a/ms] 50 60 70 80 90 0 500 1000 1500 2000 i cll0 low side switch t j = 150c t j = -40c t j = 25c
data sheet 17 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics figure 11 typical current limitation detection levels vs. supply voltage in combination with a typical inductive load, such as a motor, this resu lts in a switched m ode current limitation. this method of limiting the current has the advantage of greatly reduced power dissipation in the BTN7971B compared to driving the mosfet in linear mode. therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temper ature (e.g. for limiting the inrush current during motor start up). however, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. exceeding this temp erature can reduce the lifetime of the device. 5.3.5 short circuit protection the device is short circuit protected against ? output short circuit to ground ? output short circuit to supply voltage ? short circuit of load the short circuit protection is realized by the previously described current limitation in combination with the over- temperature shut down of the device. high side switch v s [v] i cl h [a] 60 65 70 75 80 85 90 6 8 10 12 14 16 18 2 0 t j = 25c t j = - 40c t j = 150c 60 65 70 75 80 85 90 6 8 10 12 14 16 18 2 0 t j = 150c t j = 25c t j = -40c low side switch v s [v] i cl l [a]
data sheet 18 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics 5.3.6 electrical characteris tics - protection functions v s = 8 v to 18 v, t j = -40 c to +150 c, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. under voltage shut down 5.3.1 switch-on voltage v uv(on) ??5.5v v s increasing 5.3.2 switch-off voltage 1) 1) with decreasing v s < v uv(off)max , activation of the current limitation mode may occur before undervoltage shut down with ambient temperatures less than 25c . v uv(off) 3.0 ? 4.5 v v s decreasing, in = 1, inh = 1 3.0 ? 5.5 v v s decreasing, in = 0, inh = 1 5.3.3 on/off hysteresis v uv(hy) ?0.2?v ? over voltage lock out 5.3.4 switch-on voltage v ov(on) 27.8 ? ? v v s decreasing 5.3.5 switch-off voltage v ov(off) 28 ? 30 v v s increasing 5.3.6 on/off hysteresis v ov(hy) ?0.2?v ? current limitation 5.3.7 current limitation detection level high side i clh0 55 77 98 a v s = 13.5 v 5.3.8 current limitation detection level low side i cll0 50 70 90 a v s = 13.5 v current limitation timing 5.3.9 shut off time for hs and ls t cls 70 115 210 s v s = 13.5 v thermal shut down 5.3.10 thermal shut down junction temperature t jsd 155 175 200 c? 5.3.11 thermal switch on junction temperature t jso 150 ? 190 c? 5.3.12 thermal hysteresis t ?7?k ? 5.3.13 reset pulse at inh pin (inh low) t reset 4??s?
data sheet 19 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics 5.4 control and diagnostics 5.4.1 input circuit the control inputs in and inh consist of ttl/cmos compatib le schmitt triggers with h ysteresis which control the integrated gate drivers for the mosfets. setting the inh pi n to high enables the device. in this condition one of the two power switches is switched on depending on the st atus of the in pin. to deact ivate both switches, the inh pin has to be set to low. no external driver is needed. the BTN7971B can be interfaced directly to a microcontroller, as long as the maximum ratings in chapter 4.1 are not exceeded. 5.4.2 dead time generation in bridge applications it has to be assured that the highside and lowside mosfet are not conducting at the same time, connecting directly the battery voltage to gnd. this is assured by a circuit in the driver ic, generating a so called dead time between switching off one mosfet and switching on the other. the dead time generated in the driver ic is automatically adjust ed to the selected slew rate. 5.4.3 adjustable slew rate in order to optimize electromagnetic emission, the switch ing speed of the mosfets is adjustable by an external resistor. the slew rate pin sr allows the user to op timize the balance between emission and power dissipation within his own application by conn ecting an external resistor r sr to gnd. 5.4.4 status flag diagnosis wi th current sense capability the status pin is is used as a combined current sense and error flag output. in normal operation (current sense mode), a current source is connected to the status pin, which delivers a current proportional to the forward load current flowing through the active high side switch. if the high side switch is inactive or the current is flowing in the reverse direction no current will be driven except for a marginal le akage current i is(lk) . the external resistor r is determines the voltage per output curren t. e.g. with the nominal value of 19.5 k for the current sense ratio k ilis = i l / i is , a resistor value of r is = 1 k leads to v is = ( i l / 19.5 a)v. in case of a fault condition the status output is connected to a current source which is i ndependent of the load current and provides i is(lim) . the maximum voltage at the is pin is determined by the choice of the ex ternal resistor and the supply voltage. in case of current limitation the i is(lim) is activated for 2 * t cls . figure 12 sense current and fault current normal operation: current sense mode fault condition: error flag mode vs r is i is ~ i load esd-zd v is sense output logic is r is is v is i is(lim) i is(lim) vs esd-zd sense output logic i is ~ i load
data sheet 20 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics figure 13 sense current vs. load current 5.4.5 truth table device state inputs outputs mode inh in hss lss is normal operation 0 x off off 0 stand-by mode 1 0 off on 0 lss active 1 1 on off cs hss active over-voltage (ov) x x on off 1 shut-down of lss, hss activated, error detected under-voltage (uv) x x off off 0 uv lockout overtemperature or short circuit of hss or lss 0 x off off 0 stand-by mode, reset of latch 1 x off off 1 shut-down with latch, error detected current limitation mode 1 1 off on 1 switched mode, error detected 1) 1) will return to normal operation after t cls ; error signal is reset after 2* t cls (see chapter 5.3.4 ) 1 0 on off 1 switched mode, error detected 1) inputs switches status flag is 0 = logic low off = switched off cs = current sense mode 1 = logic high on = switched on 1 = logic high (error) x = 0 or 1 i l [a] i is(lim) i is [ma] i clx error flag mode l o w e r k i l i s v a l u e h i g h e r k i l i s v a l u e current sense mode (high side)
data sheet 21 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B block description and characteristics 5.4.6 electrical characteristi cs - control and diagnostics v s = 8 v to 18 v, t j = -40 c to +150 c, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. control inputs (in and inh) 5.4.1 high level voltage inh, in v inh(h) v in(h) ? ? 1.75 1.6 2.15 2 v? 5.4.2 low level voltage inh, in v inh(l) v in(l) 1.1 1.4 ? v ? 5.4.3 input voltage hysteresis v inhhy v inhy ? ? 350 200 ? ? mv ? 5.4.4 input current high level i inh(h) i in(h) ?30150a v in = v inh = 5.3 v 5.4.5 input current low level i inh(l) i in(l) ?25125a v in = v inh = 0.4 v current sense 5.4.6 current sense ra tio in static on- condition k ilis = i l / i is k ilis 14 13 11 19.5 19.5 19.5 25 26 29 10 3 r is = 1 k i l = 40 a i l = 20 a i l = 10 a 5.4.7 maximum analog sense current, sense current in fault condition i is(lim) 456.5ma v s = 13.5 v r is = 1k 5.4.8 isense leakage current i isl ??1a v in = 0 v or v inh = 0 v 5.4.9 isense leakage current, active high side switch i ish ?1100a v in = v inh = 5 v i l = 0 a
data sheet 22 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B application information 6 application information note: the following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 6.1 application example figure 14 application example: h-bridge with two BTN7971B note: this is a simplified example of an application circuit. the function must be verified in the real application. 6.2 layout considerations due to the fast switching times for high currents, special care has to be taken to the pcb layout. stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. the BTN7971B has no separate pin for power ground and logic ground. therefore it is recommended to assure that the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the device (gnd / pin 1) is minimized. if the BTN7971B is used in a h-bridge or b6 bridge design, the voltage offset between the gnd pins of the di fferent devices should be small as well. a ceramic capacitor from vs to gnd close to each device is recommended to provide current for the switching phase via a low inductance path and therefore reducing noise and ground bounce. a reasonable value for this capacitor would be about 470 nf. the digital inputs need to be protected from excess cu rrents (e.g. caused by induced voltage spikes) by series resistors in the range of 10 k . vs out inh in is sr gnd BTN7971B vs out inh in is sr gnd BTN7971B m xc866 tle 4278g v s i/o reset vdd vss wo ro q d gnd i ipb 100p03p3l -04 microcontroller reverse polarity protection voltage regulator high current h-bridge i/o i/o i/o i/o c sc1 470nf c d 47nf c q 22f c s 470f r 1 1k d z1 10v c sc2 470nf r in1 10k r in2 10k r inh2 10k r inh1 10k r sr1 0..51k r is 12 470 r sr2 0..51k
data sheet 23 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B application information 6.3 half-bridge configuration considerations please note that, if the BTN7971B is used in a half-br idge configuration with the load connected between out and gnd and the supply voltage is exceeding the overvoltage switch-off level v ov(off) , the implemented ? overvoltage lock out ? feature leads to automatically turning on the high side s witch, while turn ing off the low side switch, and therefore connecting the load to v s ; independently of the current in- and inh-pin signals (see also ?truth table? on page 20 ). this will lead to current flowing throug h the load, if not otherwise configured. it shall be insured that the power dissipated in the nova lithic? does not exceed the maximum ratings. for further explanations see the application note ?b tn79x0 over voltage (ov) operation?. figure 15 application example: half-bridge with a BTN7971B (load to gnd) note: this is a simplified example of an application circuit. the function must be verified in the real application. m tle 4278g v s i/o reset vdd vss wo ro q d gnd i ipb 100p03p3l- 04 microcontroller reverse polarity protection voltage regulator high current half-bridge i/o i/o i/o vs out inh in is sr gnd BTN7971B c s 470f r 1 1k d z1 10v c sc 470nf r in 10k r inh 10k r sr 0..51k r is 1k c q 22f c d 47nf xc866
data sheet 24 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B package outlines 7 package outlines figure 16 pg-to263-7-1 ( plastic green transistor single outline package ) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). a b a 0.25 m 0.1 typical ?.2 10 8.5 1) 7.55 1) (15) ?.2 9.25 ?.3 1 0...0.15 7 x 0.6 ?.1 ?.1 gpt09114 1.27 4.4 b 0.5 ?.1 ?.3 2.7 4.7 ?.5 0.05 1) 0.1 metal surface min. x = 7.25, y = 6.9 2.4 1.27 all metal surfaces tin plated, except area of cut. 0...0.3 b 6 x 8? max. 8.42 10.8 9.4 16.15 4.6 0.47 0.8 footprint for further information on alternative packages, please visit our website: http://www.infineon.com/packages . dimensions in mm
data sheet 25 rev. 2.0, 2008-06-27 high current pn half bridge BTN7971B revision history 8 revision history revision date changes 2.0 2008-06-27 initial data sheet
edition 2008-06-27 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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